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| 2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm * High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A) * Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 30 30 10 6 2 5 0.5 1000 150 -55 to 150 A Unit V V V JEDEC JEITA TOSHIBA 2-7D101A A mW C C Weight: 0.2 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO VCEO VEBO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 30 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 IC = 1 mA, IC = 0 VCE = 1 V, IC = 0.5 A VCE = 1 V, IC = 2 A IC = 2 A, IB = 50 mA VCE = 1 V, IC = 2 A VCE = 1 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min 10 6 140 70 Typ. 200 0.2 0.86 150 27 Max 100 100 600 0.5 1.5 V V MHz pF Unit nA nA V V Note 2: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600 1 2004-07-07 2SC3670 Marking C3670 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC3670 IC - VCE 5 50 4 40 Common emitter Ta = 25C 30 4 5 Common emitter VCE = 1 V IC - VBE IC (A) 3 20 IC (A) Collector current 3 Ta = 100C 2 25 -25 Collector current 2 10 IB = 5 mA 1 1 0 0 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 500 Ta = 100C 300 VCE (sat) - IC Collector-emitter saturation voltage VCE (sat) (V) 0.5 0.3 Common emitter IC/IB = 40 Ta = 100C 25 -25 hFE 25 -25 DC current gain 100 0.1 50 Common emitter VCE = 1 V 20 0.5 0.1 0.3 1 3 5 0.05 0.02 0.5 0.1 0.3 1 3 5 Collector current IC (A) Collector current IC (A) Safe Operating Area PC - Ta (W) 1.2 10 5 IC max (pulsed)* 10 ms* 100 ms* 3 IC max (continuous) IC (A) PC 1.0 1 0.5 0.3 0.1 0.05 DC operation Ta = 25C Collector power dissipation 0.6 0.4 Collector current 0.8 0.2 0 0 20 40 60 80 100 120 140 160 *: Single nonrepetitive pulse Ta = 25C 0.01 Curves must be derated linearly with increase in 0.005 temperature. 0.003 0.03 0.1 0.3 1 0.03 VCEO max 3 10 30 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) 3 2004-07-07 2SC3670 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07 |
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